English
Pheda1215A
X-Ray Dynamic Flat Panel Detector
Pheda1215A series X-ray dynamic flat detector are d on advanced CMOS imaging technology, with high speed, high resolution and low noise characteristics, widely used in electronic parts testing, micro CT, lithium battery testing, casting inspection, automotive avionics manufacturing quality control and other non-destructive testing fields. The detector is equipped with GigE Vision, which makes it
easier for users to obtain data.
easier for users to obtain data.
Product Features
49.5μm pixel size
2940×2342 pixel matrix
Long irradiation life(10kGy)
Applications
- Electronic component inspection
- Micro CT
- Lithium battery inspection
- Casting inspection
- Automobile, spaceflight, electronic manufacturing quality control
Specfication
Transducers
Type
CMOS
Pixel size
49.5μm
Pixel matrix
2940×2342
Effective area
145.5×115.9 mm²
Scintillator
CsI
Irradiation lifetime
10kGy
Energy Range
40kV~160kV
Function
Acquisition mode
Continuous/Synchronous
Trig mode
Internal/External
ROI
Programmable size and location
Other
Interface
RJ45（Ethernet protocol interface）
Power supply
DC12V±10%
Consumption
≤6W
Usage environment
+10ºC~+40ºC
Storage environment
-20ºC~+60ºC
Product Comparison
Comparison
| Model | Type | Pixel size | Pixel matrix | Effective area | Rate | Scintillator | Irradiation lifetime | Energy Range | Acquisition mode | Trig mode | ROI | Interface | Power supply | Consumption | Usage environment | Storage environment | Weight | External dimensions(W×L×H) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Pheda1613D | a-Si(TFT) | 125μm | 1274×1024 | 160×128mm²（6×5in） | CsI | 20kGy | 40kV~230kV | 连续触发/触发模式 | 内触发/外触发 | 自定义任意尺寸 | RJ45 (以太网协议接口) | DC24V±10% | ≤12W | +5ºC~+35ºC | -20ºC~+60ºC | ||||
| Pheda1412-5G | CMOS | 100µm | 1404×1204 | 140.4×120.4mm² | CsI | 20kGy | 40kV～160kV | 连续触发/触发模式 | 内触发/外触发 | 自定义任意尺寸 | RJ45 (以太网协议接口) | DC12V±10% | ≤15W | +10ºC~+40ºC | -20ºC~+60ºC | ||||
| Pheda1512 | CMOS | 100µm | 1440×1120 | 144.0×112.0mm² | CsI/GOS | 20kGy | 40kV～160kV | 连续触发/触发模式 | 内触发/外触发 | 自定义任意尺寸 | RJ45 (以太网协议接口) | DC12V±10% | ≤10W | +10ºC~+40ºC | -20ºC~+60ºC | ||||
| Pheda1412 | CMOS | 100µm | 1404×1204 | 140.4×120.4mm² | CsI/GOS | 20kGy | 40kV～160kV | 连续触发/触发模式 | 内触发/外触发 | 自定义任意尺寸 | RJ45 (以太网协议接口) | DC12V±10% | ≤10W | +10ºC~+40ºC | -20ºC~+60ºC | ||||
| Pheda0606A | CMOS | 49.5μm | 1172×1260 | 58.0×62.4mm² | CsI | 10kGy | 40kV~160kV | 连续触发/触发模式 | 内触发/外触发 | 自定义任意尺寸 | RJ45（以太网协议接口） | DC12V±10% | ≤4W | +10ºC~+40ºC | -20ºC~+55ºC | ||||
| Pheda1313 | CMOS | 100µm | 1280×1280 | 128.0×128.0mm² | CsI/GOS | 20kGy | 40kV~160kV | 连续触发/触发模式 | 内触发/外触发 | 自定义任意尺寸 | RJ45 (以太网协议接口) | DC12V±10% | ≤10W | +10ºC~+40ºC | -20ºC~+60ºC |