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Merak1412
X-Ray Dynamic Flat Panel Detector
Merak1412 X-ray Dynamic Flat Panel Detectors are designed by CMOS technology. Featured by high speed, low noise, high resolution and low dose imaging, it can be widely used in dentistry, micro C-arm and other medical imaging fields.
With a standard protocol of GigE Vision, Merak1412 enables the users to acquire data in a more convenient way. The cutting-edge needle-like CsI scintillator used on Merak1412 brings clearer images under minimum radiation dose.
With a standard protocol of GigE Vision, Merak1412 enables the users to acquire data in a more convenient way. The cutting-edge needle-like CsI scintillator used on Merak1412 brings clearer images under minimum radiation dose.
Product Features
A pixel size of 100μm
1404×1204 pixel matrix
Applications
- Dental CTBT and panoramic imaging
- Other specialized CBCT
Specfication
Transducers
Type
CMOS
Pixel size
100μm
Pixel matrix
1404×1204
Effective area
140.4×120.4mm²
Scintillator
CsI
Energy Range
40kV～120kV
Function
Acquisition mode
Continuous/Synchronous Mode
Trig mode
Internal/External Trigger
ROI
Custom Size
Other
Interface
RJ45（Ethernet protocol interface）
Power supply
DC12V±10%
Consumption
≤10W
Usage environment
+10ºC~+40ºC
Storage environment
-20ºC~+55ºC
Product Comparison
Comparison
| Model | Type | Pixel size | Pixel matrix | Effective area | Rate | Scintillator | Irradiation lifetime | Energy Range | Acquisition mode | Trig mode | ROI | Interface | Power supply | Consumption | Usage environment | Storage environment | Weight | External dimensions(W×L×H) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Merak1313 | CMOS | 100μm | 1280×1280 | 128.0×128.0 mm² | CsI | 40kV～120kV | 连续触发/触发模式 | 内触发/外触发 | 自定义任意尺寸 | RJ45 (以太网协议接口,GigE 1G) | DC12V±10% | ≤10W | +10ºC~+40ºC | -20ºC~+55ºC | |||||
| Merak1215A | CMOS | 49.5μm | 2940×2342 | 115.9×145.5 mm² | CsI | 20kV～90kV | 连续触发/触发模式 | 内触发/外触发 | 自定义任意尺寸 | RJ45 (以太网协议接口,GigE 1G) | DC12V±10% | ≤6W | +10ºC~+40ºC | -20ºC~+55ºC | |||||
| Merak1613S | a-Si (TFT) | 125μm | 1274×1024 | 159.3×128 mm² | CsI | 40kV～125kV | 连续触发/触发模式 | 内触发/外触发 | 自定义任意尺寸 | RJ45 (以太网协议接口，GigE 1G) | DC24V±10% | ≤12W | +10ºC~+40ºC | -20ºC~+55ºC | |||||
| Merak1615 | CMOS | 100µm | 1600×1500 | 160×150mm² | CsI | 40kV～125kV | 连续触发/触发模式 | 内触发/外触发 | X×Y [X列数、Y行数，X、Y=2n，最小为16] | RJ45 (以太网协议接口，GigE 1G) | DC12V±10% | ≤10W | +10ºC~+40ºC | -20ºC~+55ºC | |||||
| Merak1917Z | IGZO (TFT) | 120µm | 1536×1386 | 184.3×166.3mm² | CsI | 40kV～125kV | 连续触发/触发模式 | 内触发/外触发 | 自定义任意尺寸 | RJ45（以太网协议接口，GigE 1G） | DC24V±10% | ≤10W | +10ºC~+40ºC | -20ºC~+55ºC | |||||
| Merak2121 | CMOS | 135µm | 1504×1560 | 203×211mm² | CsI | 40kV～125kV | 连续触发/触发模式 | 内触发/外触发 | 自定义任意尺寸 | RJ45（以太网协议接口，GigE 1G） | DC(12V~24V)±10% | ≤15W | +10ºC~+40ºC | -20ºC~+55ºC | |||||
| Merak3030 | CMOS | 100µm | 3240×3000 | 324×300mm² | CsI | 40kV～125kV | 连续触发/触发模式 | 内触发/外触发 | 自定义任意尺寸 | RJ45（以太网协议接口，GigE 10G） | DC24V±10% | ≤25W | +10ºC~+40ºC | -20ºC~+55ºC | |||||
| Merak3030Z | IGZO (TFT) | 148µm | 2048×2048 | 303.1×303.1mm² | Csl | 40kV～125kV | 连续触发/触发模式 | 内触发/外触发 | 自定义任意尺寸 | RJ45（以太网协议接口，GigE 10G） | DC24V±10% | ≤20W | +10ºC~+40ºC | -20ºC~+55ºC | |||||
| Merak3040 | CMOS | 100µm | 4320×3000 | 432×300mm² | CsI | 40kV～125kV | 连续模式/触发模式 | 内触发/外触发 | 自定义任意尺寸 | RJ45（以太网协议接口，GigE 10G） | DC24V±10% | ≤33W | +10ºC~+40ºC | -20ºC~+55ºC |